PMDT290UNE,115 parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Nexperia

Model:

PMDT290UNE,115

Description:

MOSFET 2N-CH 20V 0.8A SOT666

Stock:

31151

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.09

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Parameters

Current at 25 ° C - continuous drain (Id)

800mA

Drain source voltage (Vdss)

20V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

0.68nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

83pF @ 10V

On resistance (maximum) for different Ids and Vgs

380 mΩ @ 500mA,4.5V

Power - maximum

500mW

Vgs (th) (maximum) for different Ids

950mV @ 250µA

packing

TR,CT

series

Automotive, AEC-Q101, TrenchMOS™

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

SOT-563,SOT-666

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

On sale

DataSheet

下载PMDT290UNE,115.pdf

PMDT290UNE,115（FET, MOSFET）ByNexperiaDesign and production, ICQQG Electronic component purchase website provides sufficient inventory31151,Price reference "real-time change" China/Hongkong。 PMDT290UNE,115 package/specs, Download PMDT290UNE,115、Datasheet。